Browsing by Author Zahra, Hamaizia

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  • Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications.pdf.jpg
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  • Authors: Zine-eddine, Touati; Zahra, Hamaizia; Zitouni, Messai (2019)

  • In this work, we propose a novel enhancement-mode GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with a 10 nm T-gate length and a high-k TiO2 gate dielectric. The DC and RF characteristics of the proposed GaN MOS-HEMT structure are analyzed by using a TCAD Software. The device features are heavily doped (nþþ GaN) source/drain regions for reducing the contact resistances and gate capacitances, which uplift the microwave characteristics of the MOS-HEMT. The enhancementmode GaN MOS-HEMTs showed an outstanding performance with a threshold voltage of 1.07 V, maximum extrinsic transconductance of 1438 mS/mm, saturation current at VGS ¼ 2 V of 1.5 A/mm, max...

Browsing by Author Zahra, Hamaizia

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 1 to 1 of 1
  • Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications.pdf.jpg
  • Article


  • Authors: Zine-eddine, Touati; Zahra, Hamaizia; Zitouni, Messai (2019)

  • In this work, we propose a novel enhancement-mode GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with a 10 nm T-gate length and a high-k TiO2 gate dielectric. The DC and RF characteristics of the proposed GaN MOS-HEMT structure are analyzed by using a TCAD Software. The device features are heavily doped (nþþ GaN) source/drain regions for reducing the contact resistances and gate capacitances, which uplift the microwave characteristics of the MOS-HEMT. The enhancementmode GaN MOS-HEMTs showed an outstanding performance with a threshold voltage of 1.07 V, maximum extrinsic transconductance of 1438 mS/mm, saturation current at VGS ¼ 2 V of 1.5 A/mm, max...