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Browsing by Author Cao, Thi Vi Ba

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  • 4236-97-8192-1-10-20180103.pdf.jpg
  • Article

  • Calculation of the Ettingshausen coefficient in a Rectangular quantum wire with an infinite potential in the presence of an Electromagnetic wave (the electron - optical phonon interaction )

    • Authors: Cao, Thi Vi Ba; Tran, Hai Hung; Doan, Minh Quang; Nguyen, Quang Bau (2017)

  • The Ettingshausen coefficient (EC) in a Rectangular quantum wire with an infinite potential (RQWIP)in the presence of an Electromagnetic wave (EMW) is calculated by using a quantum kinetic equation for electrons. Considering the case of the electron - optical phonon interaction, we have found the expressions of the kinetic tensors . From the kinetic tensors, we have also obtained the analytical expression of the EC in the RQWIP in the presence of EMW as function of the frequency and the intensity of the EMW, of the temperature of system, of the magnetic field and of the characteristic parameters of RQWIP. The theoretical results for the EC are numerically evaluated, plotted and disc...
  • 4214-97-8093-1-10-20171016.pdf.jpg
  • Article

  • Influence of Confined Optical Phonons and Laser Radiation on the Radioelectric Effect in a Cylindrical Semiconductor Quantum Wire with Parabolic Potential

    • Authors: Nguyen, Quang Bau; Cao, Thi Vi Ba; Do, Tuan Long (2017)

  • Based on the quantum kinetic equation method, the influence of confined optical phonons and laser radiation on the Radioelectric effect in a cylindrical semiconductor quantum wire with parabolic potential subjected to a dc electric field and a linearly polarized electromagnetic wave has been theoretically studied. The obtained analytical expression of the Radioelectric field (REF) depends on frequencies and amplitudes of the external electromagnetic waves, the quantum wire parameters, the temperature of the system, and especially the quantum numbers (n and m) which characterize the phonon confinement. Numerical calculations for the GaAs/GaAsAl quantum wire show the strongly impact of ...
  • 4338-97-8857-1-10-20190621.pdf.jpg
  • Article

  • The Calculation of the Ettingshausen Coefficient in Quantum Wells under the Influence of Confined Phonons (for Electron – confined Optical Phonon Scattering)

    • Authors: Nguyen, Thi Lam Quynh; Cao, Thi Vi Ba; Nguyen, Quang Bau (2019)

  • In this paper, we have used the method of quantum kinetic equation to calculate the analytic expression for Ettingshausen coefficient (EC) under the influence of confined phonon. We considered a quantum well in the presence of constant electric field, magnetic field and electromagnetic wave (EMW) with assumption that electron – confined optical phonon (OP) scattering is essential. The EC obtained depends on many quantities in a complicated way such as temperature, magnetic field, frequency or amplitude of EMW and m - quantum number which specify confined OP. Numerical results for GaAs/GaAsAl quantum well (QW) have displayed clearly the differences in comparison with both cases of bulk...
  • item.jpg
  • Journal Article

  • The Ettingshausen Effect in Doped Semiconductor Superlattice under the Influence of Confined Optical Phonon

    • Authors: Cao, Thi Vi Ba; Nguyen, Thi Lam Quynh; Nguyen, Quang Bau (2020)

  • The electron – optical phonon scattering is considered in detail to studying the Ettingshausen effect in doped semiconductor superlattice under the influence of phonon confinement and laser radiation. The analytical expressions for tensors and the Ettingshausen coefficient are obtained by using the kinetic equation method. The Ettingshausen coefficient depends on temperature of the sample, amplitude and frequency of laser radiation, magnetic field and the quantum number m specific for the confinement of phonon. The dependences are clearly displayed in the numerical results for GaAs:Be/GaAs:Si doped semiconductor superlattice. The magnetic field makes the Ettingshausen coefficie...

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Browsing by Author Cao, Thi Vi Ba

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 1 to 4 of 4
  • 4236-97-8192-1-10-20180103.pdf.jpg
  • Article

  • Calculation of the Ettingshausen coefficient in a Rectangular quantum wire with an infinite potential in the presence of an Electromagnetic wave (the electron - optical phonon interaction )

    • Authors: Cao, Thi Vi Ba; Tran, Hai Hung; Doan, Minh Quang; Nguyen, Quang Bau (2017)

  • The Ettingshausen coefficient (EC) in a Rectangular quantum wire with an infinite potential (RQWIP)in the presence of an Electromagnetic wave (EMW) is calculated by using a quantum kinetic equation for electrons. Considering the case of the electron - optical phonon interaction, we have found the expressions of the kinetic tensors . From the kinetic tensors, we have also obtained the analytical expression of the EC in the RQWIP in the presence of EMW as function of the frequency and the intensity of the EMW, of the temperature of system, of the magnetic field and of the characteristic parameters of RQWIP. The theoretical results for the EC are numerically evaluated, plotted and disc...
  • 4214-97-8093-1-10-20171016.pdf.jpg
  • Article

  • Influence of Confined Optical Phonons and Laser Radiation on the Radioelectric Effect in a Cylindrical Semiconductor Quantum Wire with Parabolic Potential

    • Authors: Nguyen, Quang Bau; Cao, Thi Vi Ba; Do, Tuan Long (2017)

  • Based on the quantum kinetic equation method, the influence of confined optical phonons and laser radiation on the Radioelectric effect in a cylindrical semiconductor quantum wire with parabolic potential subjected to a dc electric field and a linearly polarized electromagnetic wave has been theoretically studied. The obtained analytical expression of the Radioelectric field (REF) depends on frequencies and amplitudes of the external electromagnetic waves, the quantum wire parameters, the temperature of the system, and especially the quantum numbers (n and m) which characterize the phonon confinement. Numerical calculations for the GaAs/GaAsAl quantum wire show the strongly impact of ...
  • 4338-97-8857-1-10-20190621.pdf.jpg
  • Article

  • The Calculation of the Ettingshausen Coefficient in Quantum Wells under the Influence of Confined Phonons (for Electron – confined Optical Phonon Scattering)

    • Authors: Nguyen, Thi Lam Quynh; Cao, Thi Vi Ba; Nguyen, Quang Bau (2019)

  • In this paper, we have used the method of quantum kinetic equation to calculate the analytic expression for Ettingshausen coefficient (EC) under the influence of confined phonon. We considered a quantum well in the presence of constant electric field, magnetic field and electromagnetic wave (EMW) with assumption that electron – confined optical phonon (OP) scattering is essential. The EC obtained depends on many quantities in a complicated way such as temperature, magnetic field, frequency or amplitude of EMW and m - quantum number which specify confined OP. Numerical results for GaAs/GaAsAl quantum well (QW) have displayed clearly the differences in comparison with both cases of bulk...
  • item.jpg
  • Journal Article

  • The Ettingshausen Effect in Doped Semiconductor Superlattice under the Influence of Confined Optical Phonon

    • Authors: Cao, Thi Vi Ba; Nguyen, Thi Lam Quynh; Nguyen, Quang Bau (2020)

  • The electron – optical phonon scattering is considered in detail to studying the Ettingshausen effect in doped semiconductor superlattice under the influence of phonon confinement and laser radiation. The analytical expressions for tensors and the Ettingshausen coefficient are obtained by using the kinetic equation method. The Ettingshausen coefficient depends on temperature of the sample, amplitude and frequency of laser radiation, magnetic field and the quantum number m specific for the confinement of phonon. The dependences are clearly displayed in the numerical results for GaAs:Be/GaAs:Si doped semiconductor superlattice. The magnetic field makes the Ettingshausen coefficie...