ArticleAuthors: Dao, Thanh Toan (2017)
In this paper, a pentacene photo organic thin-film transistor (photoOTFT) was fabricated and characterized. The gate dielectric acted as a sensing layer thanks to it strongly absorbs UV light. Electrical behaviors of photoOTFT were measured under 365 nm UV illumination from the gate electrode side. The current in transistor channel was significantly enhanced by photoelectrons at interface of buffer/gate dielectric. Photosensitivity increased with the light intensity but decreased with the applied gate voltage. Meanwhile the photoresponsivity decreased with the light intensity and increased with the applied gate voltage. The transistor responses well with the pulse of light with many c... 
