Browsing by Subject R.F. magnetron sputtering

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  • Authors: Ta, Dinh Canh; Nguyen, Viet Tuyen; Nguyen, Ngoc Long; Vo, Ly Thanh Ha (2010)

  • n-ZnO:hVp-Si heterojunctions have been fabricated by sputter deposition of nZnO:ln on p-Si substrates. The lowest resistivity n-ZnO:In film was obtained at a substrate temperature of 150oC using a ZnO target doped with 2 wt% In2O3. At substrate temperature above 300oC the resistivity of the film increases as the carrier concentration decreases. This implies a significant decrease in the donor impurity, which is ascribed to evaporation of the indium during film growth. The wavelength dependent properties of the photo-response for the heterojunction were investigated in detail by studying the effect of light illumination on current - voltage (I-V) characteristic, photocurrent spectra ...

Browsing by Subject R.F. magnetron sputtering

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 1 to 1 of 1
  • 113.pdf.jpg
  • Article


  • Authors: Ta, Dinh Canh; Nguyen, Viet Tuyen; Nguyen, Ngoc Long; Vo, Ly Thanh Ha (2010)

  • n-ZnO:hVp-Si heterojunctions have been fabricated by sputter deposition of nZnO:ln on p-Si substrates. The lowest resistivity n-ZnO:In film was obtained at a substrate temperature of 150oC using a ZnO target doped with 2 wt% In2O3. At substrate temperature above 300oC the resistivity of the film increases as the carrier concentration decreases. This implies a significant decrease in the donor impurity, which is ascribed to evaporation of the indium during film growth. The wavelength dependent properties of the photo-response for the heterojunction were investigated in detail by studying the effect of light illumination on current - voltage (I-V) characteristic, photocurrent spectra ...