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Title: Pulsed electron beam deposition of transparent conducting Al-doped ZnOfilms
Authors: Pham, Hong Quang
Ngo, Dinh Sang
Do, Quang Ngoc
Keywords: Zinc oxide;Doped II–VI semiconductors;Pulsed electron beam deposition;Thinfilms;Microstructure
Issue Date: 2012
Abstract: Good quality transparent conducting Al-doped ZnOfilms were deposited on quartz substrates from a high purity target using pulsed electron deposition (PED). Two series offilms were made, one deposited at room temperature but at four pressures, viz., 0.7, 1.3, 2.0 and 2.7 Pa of oxygen and one deposited at 1.3 Pa oxygen pressure but at the substrate temperature ranged from room temperature to 600 °C. In order to eval-uate the effect of substrate temperature and oxygen pressure on the properties of obtainedfilms, various characterization techniques were employed including X-ray diffraction, stylus profiler, scanning electron mi-croscope, optical spectrophotometer and electrical resistivity. For thefirst seriesfilms, the optimal oxygen pressure of 1.3 Pa was found to bring about the appropriate energetic deposition atoms which results in the best crystallinity. For the second series films, the lowest resistivity was obtained in the film grown at 400 °C. An attempt was made to reduce the resistivity by lowering the oxygen pressure to 0.5 Pa which was the lower limit of working pressure of the PED system. The obtained results indicate that PED is a suitable technique for growing transparent conducting ZnOfilms.
Description: TNS06837; THIN SOLID FILMS Volume: 520 Issue: 21 Pages: 6455-6458 Published: AUG 31 2012
ISSN: 0040-6090
Appears in Collections:Bài báo của ĐHQGHN trong Web of Science

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