Please use this identifier to cite or link to this item: http://repository.vnu.edu.vn/handle/VNU_123/27206
Title: Operation mechanism of Schottky barrier nonvolatile memory with high conductivity InGaZnO active layer
Authors: Trinh, Thanh Thuy
Nguyen, Van Duy
Nguyen, Hong Hanh
Dao, Vinh Ai
Jayapal, Raja
Keywords: THIN-FILM TRANSISTORS;FABRICATION;SEMICONDUCTOR;CHANNEL
Issue Date: 2012
Publisher: AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
Citation: ISIKNOWLEDGE
Abstract: Influence of Schottky contact between source/drain electrodes and high conductivity a-InGaZnO active layer to the performance of nonvolatile memory devices was first proposed. The Schottky barrier devices faced to the difficulty on electrical discharging process due to the energy barrier forming at the interface, which can be resolved by using Ohmic devices. A memory window of 2.83V at programming/erasing voltage of +/-13V for Ohmic and 5.58V at programming voltage of 13V and light assisted erasing at -7 V for Schottky devices was obtained. Both memory devices using SiO2/SiOx/SiOxNy stacks showed a retention exceeding 70% of trapped charges 10 yr with operation voltages of +/-13V at an only programming duration of 1 ms. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3699221]
Description: TNS06892 ; APPLIED PHYSICS LETTERS Volume: 100 Issue: 14 Article Number: 143502 Published: APR 2 2012
URI: http://repository.vnu.edu.vn/handle/VNU_123/27206
ISSN: 0003-6951
1077-3118
Appears in Collections:Bài báo của ĐHQGHN trong Web of Science

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