Please use this identifier to cite or link to this item: http://repository.vnu.edu.vn/handle/VNU_123/27292
Title: Unipolar Resistance Switching Characteristics in a Thick ZnO/Cu/ZnO Multilayer Structure
Authors: Le Tran
Tran Hoang Cao Son
Le Van Hieu
Keywords: Resistance switching;Random access memory;Sputtering;ZnO
Issue Date: 2012
Publisher: KOREAN PHYSICAL SOC, 635-4, YUKSAM-DONG, KANGNAM-KU, SEOUL 135-703, SOUTH KOREA
Citation: ISIKNOWLEDGE
Abstract: The resistance switching mechanism and the electrical conduction of thick Cu/ZnO/Cu/ZnO/Cu structures were investigated for various ZnO thicknesses (40, 80, 160, and 320 nm) when the thickness of the middle Cu layer was 2 nm. The ZnO films had a microstructure with columnar grains normal to the substrate. The switching voltages (V-SET and V-RESET) varied with the thickness of the ZnO layer. A symmetric electrode structure exhibited a unipolar resistance switching. The electrical transport of both high-resistance state (HRS) and low-resistance state (LRS) was Ohmic conduction, and the resistance switching mechanism was driven by the formation and the rupture of Cu conducting paths.
Description: TNS06894 ; JOURNAL OF THE KOREAN PHYSICAL SOCIETY Volume: 60 Issue: 7 Pages: 1087-1091 Published: APR 2012
URI: http://repository.vnu.edu.vn/handle/VNU_123/27292
http://link.springer.com/article/10.3938/jkps.60.1087
ISSN: 0374-4884
1976-8524
Appears in Collections:Bài báo của ĐHQGHN trong Web of Science

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