Please use this identifier to cite or link to this item: http://repository.vnu.edu.vn/handle/VNU_123/56698
Title: Pration and characteristics of the In-doped ZnO thin films the n-ZnO :In/p-Si heterojunctions for optoelectronic switch
Authors: Ta, Dinh Canh
Nguyen, Viet Tuyen
Nguyen, Ngoc Long
Vo, Ly Thanh Ha
Keywords: n-ZnO:In/p-Si;Heterojunction;R.F. magnetron sputtering;current-voltage characteristics;Photocurrent
Issue Date: 2010
Publisher: H. : ĐHQGHN
Series/Report no.: Vol. 26;No. 1 (2010)
Abstract: n-ZnO:hVp-Si heterojunctions have been fabricated by sputter deposition of nZnO:ln on p-Si substrates. The lowest resistivity n-ZnO:In film was obtained at a substrate temperature of 150oC using a ZnO target doped with 2 wt% In2O3. At substrate temperature above 300oC the resistivity of the film increases as the carrier concentration decreases. This implies a significant decrease in the donor impurity, which is ascribed to evaporation of the indium during film growth. The wavelength dependent properties of the photo-response for the heterojunction were investigated in detail by studying the effect of light illumination on current - voltage (I-V) characteristic, photocurrent spectra at room temperature. From the photocurrent spectra, it was observed that the visible photons are absorbed in the p-Si layer, while ultraviolet (UV) photons are absorbed in the depleted n-ZnO:ln film under reverse bias conditions. The properties of ZnO:In films prepared by r.f. magnetron sputtering are good enough to be used in photoelectrical devices.
Description: p. 9-16
URI: http://repository.vnu.edu.vn/handle/VNU_123/56698
ISSN: 2588-1124
Appears in Collections:Mathematics and Physics

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