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|Title:||CuAlS2 thin films - Dip coating deposition and characterization|
|Authors:||Chaki, Sunil H.|
Mahato, Kanchan S.
Malek, Tasmira J.
|Keywords:||CuAlS2;Thin film;Dip coating;XRD;Microscopy;Electrical transport properties|
|Publisher:||H. : ĐHQGHN|
|Abstract:||CuAlS2thin films were deposited by a dip coating technique at room temperature. The X-ray energy dispersive (EDAX) and X-ray diffraction (XRD) analysis showed that the deposited CuAlS2thin film is nearly stoichiometric and possesses a tetragonal unit cell structure. The crystallite sizes determined from the XRD data employing Scherrer's formula and modified forms of HalleWilliamson relation like the uniform deformation model (UDM), uniform stress deformation model (USDM), uniform deformation energy density model (UDEDM), and the sizeestrain plot method (SSP) were in good agreement with each other. The transmission electron microscopy (TEM) and scanning electron microscopy (SEM) studies of the thinfilm revealed that the deposited film is uniform without any cracks and the film covers the whole of the substrates. The atomic force microscopy (AFM) of the as-synthesized thinfilm surfaces showed spherical grains having coalescences between them. The optical absorbance spectrum analysis showed that the thinfilms possess both direct and indirect band gaps. The semiconducting and p-type nature of the thinfilms was confirmed fromdceelectrical resistivity versus temperature, room tem-perature Hall effect, and Seebeck coefficient versus temperature measurements. The effect of the different illuminations on the CuAlS2thinfilm showed that it can be used as a material for absorption of ultra-violet radiation. All the obtained characterization results are deliberated in detail.|
|Appears in Collections:||Advanced Materials and Devices|
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