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|Title:||Elemental, structural and optical properties of nanocrystalline Zn1-xCuxSe films deposited by close spaced sublimation technique|
|Keywords:||X-ray diffraction;Morphology;Dielectric constant;Spectroscopic ellipsometer;Energy band gap|
|Publisher:||H. : ĐHQGHN|
|Abstract:||The elemental composition, film thickness and concentration depth profiles of as-deposited and annealed Zn1-xCuxSe films were studied by the Rutherford back scattering spectrometer (RBS) technique. The films were deposited on glass substrates by close spaced sublimation (CSS) technique. As-deposited films of about 250-300 nm thickness were then annealed in air at temperatures of 200C and 400C for 1 h. Structural characterization including crystal structure, crystal orientation, stacking fault energy (ҮSFE) and surface morphology were carried out by using X-ray diffraction (XRD) and atomic force mi-croscopy (AFM). XRD studies revealed that the fabricatedfilms are polycrystalline with a zinc-blende structure and a strong (111) texture plane. Surface roughness was observed to be enhanced with annealing temperature with a decrease in stacking fault energy (ҮSFE). Spectroscopic ellipsometry has been utilized for the estimation of band gap energy (Eg) and dielectric constant (ε1). Band gap energy of thefilm increased with increasing annealing temperature while the dielectric constant decreased.|
|Appears in Collections:||Advanced Materials and Devices|
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