Please use this identifier to cite or link to this item: http://repository.vnu.edu.vn/handle/VNU_123/58048
Title: High efficiency green/yellow and red InGaN/AlGaN nanowire light-emitting diodes grown by molecular beam epitaxy
Authors: Philipa, M.R.
Choudhary, D.D.
M. Djavid
Le, K.Q.
Piao, J.
Nguyen, H.P.T.
Keywords: Light-emitting diodes;Molecular beam epitaxy;Nanowire;Coreeshell III-Nitride
Issue Date: 2017
Publisher: H. : ĐHQGHN
Abstract: We report on the achievement of high efficiency green, yellow, and red InGaN/AlGaN dot-in-a-wire nanowire light-emitting diodes grown on Si(111) by molecular beam epitaxy. The peak emission wavelengths were altered by varying the growth conditions, including the substrate temperature, and In/Gaflux ratio. The devices demonstrate relatively high (>40%) internal quantum efficiency at room temperature, relative to that measured at 5 K. Moreover, negligible blue-shift in peak emission spectrum associated with no efficiency droop was measured when injection current was driven up to 556 A/cm2
Description: p. 150-155
URI: http://repository.vnu.edu.vn/handle/VNU_123/58048
ISSN: 2468-2284
Appears in Collections:Advanced Materials and Devices

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