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|Title:||High efficiency green/yellow and red InGaN/AlGaN nanowire light-emitting diodes grown by molecular beam epitaxy|
|Keywords:||Light-emitting diodes;Molecular beam epitaxy;Nanowire;Coreeshell III-Nitride|
|Publisher:||H. : ĐHQGHN|
|Abstract:||We report on the achievement of high efficiency green, yellow, and red InGaN/AlGaN dot-in-a-wire nanowire light-emitting diodes grown on Si(111) by molecular beam epitaxy. The peak emission wavelengths were altered by varying the growth conditions, including the substrate temperature, and In/Gaflux ratio. The devices demonstrate relatively high (>40%) internal quantum efficiency at room temperature, relative to that measured at 5 K. Moreover, negligible blue-shift in peak emission spectrum associated with no efficiency droop was measured when injection current was driven up to 556 A/cm2|
|Appears in Collections:||Advanced Materials and Devices|
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