Please use this identifier to cite or link to this item:
|Title:||Based on the quantum kinetic equation method, the Hall effect in doped semiconductor superlattices (DSSL) has been theoretically studied under the influence of confined LO-phonons and the laser radia-tion. The analytical expression of the Hall conductivity tensor, the magnetoresistance and the Hall co-efficient of aGaAs:Si/GaAs:BeDSSL is obtained in terms of the externalfields, lattice period and doping concentration. The quantum numbersN, n, mwere varied in order to characterize the effect of electron and LO-phonon confinement. Numerical evaluations showed that LO-phonon confinement enhanced the probability of electron scattering, thus increasing the number of resonance peaks in the Hall conductivity tensor and decreasing the magnitude of the magnetoresistance as well as the Hall coefficient when compared to the case of bulk phonons. The nearly linear increase of the magnetoresistance with tem-perature was found to be in good agreement with experiment|
|Authors:||Jose Luiz Ferreira|
|Keywords:||Intermediate valence;Lanthanide compounds;Periodic Anderson Model|
|Abstract:||The valence instability in lanthanide systems is described within an extended periodic Anderson Hamiltonian (EPAM) which includes Coulomb repulsion between f- and conduction- electrons, allowing to describe both discontinuous and continuous valence variations. We investigate the connection be-tween valence and magnetism in this model and show that it can be applied to several lanthanide compounds showing both magnetic and valence instabilities|
|Appears in Collections:||Advanced Materials and Devices|
Files in This Item:
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.