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|Title:||STATIC AND DYNAMIC CHARACTERISTICS OF Lg 50nm InAlN/AlN/GaN HEMT WITH AlGaN BACK-BARRIER FOR HIGH POWER MILLIMETRE WAVE APPLICATIONS|
|Keywords:||HEMT;2DEG;Static and dynamic characteristics;Cut-off frequency;Back-barrier|
|Publisher:||H. : ĐHQGHN|
|Abstract:||In this paper, a novel 50 nm recessed T-gate AlNspacer based InAlN/GaN HEMT with AlGaN back-barrier is designed. The static and dynamic characteristics of the proposed device structure are investigated using Synopsys TCAD tool. The other device features are heavily doped source/drain region, Al2O3 passivated device surface which are helped the device to suppress the parasitic resistances and capacitances of the transistor for enhancing the microwave characteristics. The proposed InAlN/GaN HEMT exhibits the sheet carrier density (ns) of 1.9x1013 cm-2, drain current density (Ids) of 2.1 A/mm, transconductance (gm) of 800 mS/mm, 40 V breakdown voltage (VBR), current gain cut-off frequency (ft) of 221 GHz and power gain cut-off frequency (fmax) of 290 GHz. The superior static and dynamic characteristics of InAlN/GaN HEMT obtained, undoubtedly places the device at the forefront for high power millimetre wave applications.|
|Appears in Collections:||Advanced Materials and Devices|
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