Browsing by Author N.H. Duc

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  • Detection-of-magnetic-nanoparticles-using-simple-AMR-sensors-in-Wheatstone-bridge_2016_Journal-of-Science-Advanced-Materials-and-Devices.pdf.jpg
  • Article


  • Authors: L.K. Quynh; B.D. Tu; D.X. Dang; D.Q. Viet; L.T. Hien; D.T. Huong Giang; N.H. Duc (2016)

  • Wheatstone bridges incorporating a serially connected ensemble of simple AMR elements of Ni80Fe20 film were produced, targeting an application of a pinned magnetic field along the sensing magneto-resistor length. For the optimal dimension, the magnetoresistive element with length l ¼ 4 mm, width w ¼ 150 mm and thickness t ¼ 5 nm still shows a rather modest AMR ratio (of about 0.85% only). However, the resulting bridge exhibits a sensitivity as large as 2.15 mV/Oe. This is according to a standard sensitivity of 1.80 mV/V/Oe and a detection limit better than 10 6 emu, which is almost doubled with respect to that in the typical commercial AMR devices and is comparable with Permalloy base...

  • Fabrication-and-characterization-of-PZT-string-based-MEMS-devices_2016_Journal-of-Science-Advanced-Materials-and-Devices.pdf.jpg
  • Article


  • Authors: D.T. Huong Giang; N.H. Duc; G. Agnus; T. Maroutian; P. Lecoeur (2016)

  • String based MEMS devices recently attract world technology development thanks to their advantages over cantilever ones. Approaching to this direction, the paper reports on the micro-fabrication and characterization of free-standing doubly clamped piezoelectric beams based on heterostructures of Pd/ FeNi/Pd/PZT/LSMO/STO/Si. The displacement of strings is investigated in both static and dynamic mode. The static response exhibits a bending displacement as large as 1.2 am, whereas the dynamic response shows a strong resonance with a high quality factor of around 35 depending on the resonant mode at atmospheric pressure. These findings are comparable with those observed in large dim...

  • Low-temperature-PZT-thin-film-ferroelectric-memories-fabricated-on-SiO2-Si-and-glass-substrates_2016_Journal-of-Science-Advanced-Materials-and-Devices.pdf.jpg
  • Article


  • Authors: D.H. Minh; N.V. Lo; N.H. Duc; B.N.Q. Trinh (2016)

  • In a ferroelectric-gate thin film transistor memory (FGT) type structure, the gate-insulator layer is extremely important for inducing the charge when accumulating or depleting. We concentrated on the application of low-temperature PZTfilms crystallized at 450, 500 and 550 C, instead of at conventional high temperatures ( 600 C). Investigation of the crystalline structure and electrical properties indicated that the PZTfilm, crystallized at 500 C, was suitable for FGT fabrication because of a high (111) orien-tation, large remnant polarization of 38 aC/cm 2 on SiO2/Si substrate and 17.8 aC/cm 2 on glass, and low leakage current of 10- 6A/cm 2 . In sequence, we successfully fabricate...

Browsing by Author N.H. Duc

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 1 to 3 of 3
  • Detection-of-magnetic-nanoparticles-using-simple-AMR-sensors-in-Wheatstone-bridge_2016_Journal-of-Science-Advanced-Materials-and-Devices.pdf.jpg
  • Article


  • Authors: L.K. Quynh; B.D. Tu; D.X. Dang; D.Q. Viet; L.T. Hien; D.T. Huong Giang; N.H. Duc (2016)

  • Wheatstone bridges incorporating a serially connected ensemble of simple AMR elements of Ni80Fe20 film were produced, targeting an application of a pinned magnetic field along the sensing magneto-resistor length. For the optimal dimension, the magnetoresistive element with length l ¼ 4 mm, width w ¼ 150 mm and thickness t ¼ 5 nm still shows a rather modest AMR ratio (of about 0.85% only). However, the resulting bridge exhibits a sensitivity as large as 2.15 mV/Oe. This is according to a standard sensitivity of 1.80 mV/V/Oe and a detection limit better than 10 6 emu, which is almost doubled with respect to that in the typical commercial AMR devices and is comparable with Permalloy base...

  • Fabrication-and-characterization-of-PZT-string-based-MEMS-devices_2016_Journal-of-Science-Advanced-Materials-and-Devices.pdf.jpg
  • Article


  • Authors: D.T. Huong Giang; N.H. Duc; G. Agnus; T. Maroutian; P. Lecoeur (2016)

  • String based MEMS devices recently attract world technology development thanks to their advantages over cantilever ones. Approaching to this direction, the paper reports on the micro-fabrication and characterization of free-standing doubly clamped piezoelectric beams based on heterostructures of Pd/ FeNi/Pd/PZT/LSMO/STO/Si. The displacement of strings is investigated in both static and dynamic mode. The static response exhibits a bending displacement as large as 1.2 am, whereas the dynamic response shows a strong resonance with a high quality factor of around 35 depending on the resonant mode at atmospheric pressure. These findings are comparable with those observed in large dim...

  • Low-temperature-PZT-thin-film-ferroelectric-memories-fabricated-on-SiO2-Si-and-glass-substrates_2016_Journal-of-Science-Advanced-Materials-and-Devices.pdf.jpg
  • Article


  • Authors: D.H. Minh; N.V. Lo; N.H. Duc; B.N.Q. Trinh (2016)

  • In a ferroelectric-gate thin film transistor memory (FGT) type structure, the gate-insulator layer is extremely important for inducing the charge when accumulating or depleting. We concentrated on the application of low-temperature PZTfilms crystallized at 450, 500 and 550 C, instead of at conventional high temperatures ( 600 C). Investigation of the crystalline structure and electrical properties indicated that the PZTfilm, crystallized at 500 C, was suitable for FGT fabrication because of a high (111) orien-tation, large remnant polarization of 38 aC/cm 2 on SiO2/Si substrate and 17.8 aC/cm 2 on glass, and low leakage current of 10- 6A/cm 2 . In sequence, we successfully fabricate...