ArticleAuthors: L.K. Quynh; B.D. Tu; D.X. Dang; D.Q. Viet; L.T. Hien; D.T. Huong Giang; N.H. Duc (2016)
Wheatstone bridges incorporating a serially connected ensemble of simple AMR elements of Ni80Fe20 film were produced, targeting an application of a pinned magnetic field along the sensing magneto-resistor length. For the optimal dimension, the magnetoresistive element with length l ¼ 4 mm, width w ¼ 150 mm and thickness t ¼ 5 nm still shows a rather modest AMR ratio (of about 0.85% only). However, the resulting bridge exhibits a sensitivity as large as 2.15 mV/Oe. This is according to a standard sensitivity of 1.80 mV/V/Oe and a detection limit better than 10 6 emu, which is almost doubled with respect to that in the typical commercial AMR devices and is comparable with Permalloy base... 
