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Browsing by Author B.N.Q. Trinh

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  • Low-temperature-PZT-thin-film-ferroelectric-memories-fabricated-on-SiO2-Si-and-glass-substrates_2016_Journal-of-Science-Advanced-Materials-and-Devices.pdf.jpg
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  • Low- temperature PZT thin-film ferroelectric memories fabricated on SiO2/Si and glass substrates

    • Authors: D.H. Minh; N.V. Lo; N.H. Duc; B.N.Q. Trinh (2016)

  • In a ferroelectric-gate thin film transistor memory (FGT) type structure, the gate-insulator layer is extremely important for inducing the charge when accumulating or depleting. We concentrated on the application of low-temperature PZTfilms crystallized at 450, 500 and 550 C, instead of at conventional high temperatures ( 600 C). Investigation of the crystalline structure and electrical properties indicated that the PZTfilm, crystallized at 500 C, was suitable for FGT fabrication because of a high (111) orien-tation, large remnant polarization of 38 aC/cm 2 on SiO2/Si substrate and 17.8 aC/cm 2 on glass, and low leakage current of 10- 6A/cm 2 . In sequence, we successfully fabricate...

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Browsing by Author B.N.Q. Trinh

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 1 to 1 of 1
  • Low-temperature-PZT-thin-film-ferroelectric-memories-fabricated-on-SiO2-Si-and-glass-substrates_2016_Journal-of-Science-Advanced-Materials-and-Devices.pdf.jpg
  • Article

  • Low- temperature PZT thin-film ferroelectric memories fabricated on SiO2/Si and glass substrates

    • Authors: D.H. Minh; N.V. Lo; N.H. Duc; B.N.Q. Trinh (2016)

  • In a ferroelectric-gate thin film transistor memory (FGT) type structure, the gate-insulator layer is extremely important for inducing the charge when accumulating or depleting. We concentrated on the application of low-temperature PZTfilms crystallized at 450, 500 and 550 C, instead of at conventional high temperatures ( 600 C). Investigation of the crystalline structure and electrical properties indicated that the PZTfilm, crystallized at 500 C, was suitable for FGT fabrication because of a high (111) orien-tation, large remnant polarization of 38 aC/cm 2 on SiO2/Si substrate and 17.8 aC/cm 2 on glass, and low leakage current of 10- 6A/cm 2 . In sequence, we successfully fabricate...