Browsing by Author Bui, Nguyen Quoc Trinh

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  • 00051000283.pdf.jpg
  • Thesis


  • Authors: Nguyen, Van Dung;  Advisor: Bui, Nguyen Quoc Trinh (2018)

  • Recently, metal oxide based thin film transistors (TFTs) have attracted significant attention for application in display industry, for examples, flexible display, and flat panel display because of their excellent performances. In covalent semiconductor consisting of sp3 orbital, the bond angle significantly affects to charge transport in the bottom of the conduction band, leading to low mobility and unsteady of silicon-based TFTs. However, the overlap between neighbor metal ns orbital in metal oxide semiconductor could happen in an amorphous phase because the carrier transport paths include both metal ns orbitals, which lead to high charge carrier mobility in amorphous structu...

  • 4265-97-8324-2-10-20180807.pdf.jpg
  • Article


  • Authors: Nguyen, Quang Hoa; Bui, Nguyen Quoc Trinh (2018)

  • Lanthanum nickel oxide LaNiO3 (LNO) isextensively known as one of typical perovskite-structured materials with metallic conductivity, which is suitable for the electrode application in electronic devices such as transistors or solar cells. Since LNO is a low-cost material and a simple fabrication process, it has been attracted much attention for commercialization. In this paper, we have focused on optimizing the fabrication process of LNO thin films on SiO2/Sisubstrate and Al foil by using asolution process. The crystal structure and surface morphology were characterized by using X-ray diffraction and field-emission scanning electron microscopy (FE-SEM), respectively. It was found tha...

  • 4265-97-8324-2-10-20180807.pdf.jpg
  • Article


  • Authors: Nguyen, Quang Hoa; Bui, Nguyen Quoc Trinh (2018)

  • Lanthanum nickel oxide LaNiO3 (LNO) isextensively known as one of typical perovskite-structured materials with metallic conductivity, which is suitable for the electrode application in electronic devices such as transistors or solar cells. Since LNO is a low-cost material and a simple fabrication process, it has been attracted much attention for commercialization. In this paper, we have focused on optimizing the fabrication process of LNO thin films on SiO2/Sisubstrate and Al foil by using asolution process. The crystal structure and surface morphology were characterized by using X-ray diffraction and field-emission scanning electron microscopy (FE-SEM), respectively. It was found tha...

  • 4351-97-8861-1-10-20190621.pdf.jpg
  • Article


  • Authors: Bui, Nguyen Quoc Trinh (2019)

  • A novel concept of NAND memory array has been proposed by using only ferroelectric-gate thin film transistors (FGTs), whose structure is constructed from a sol-gel ITO channel and a sol-gel stacked ferroelectric between Bi3.25La0.75Ti3O12 and PbZr0.52TiO0.48O3 (BLT/PZT) gate insulator. Interestingly, ferroelectric cells with a wide memory window of 3 V and a large on/off current ratio of 6 orders, have been successfully integrated in a NAND memory circuit. To protect data writing or reading from disturbance, ferroelectric transistor cells are directly used, instead of paraelectric transistor cells as usual. As a result, we have verified disturbance-free operation for data reading and ...

  • 4244-97-8195-1-10-20180103.pdf.jpg
  • Article


  • Authors: Hoang, Ha; Bui, Nguyen Quoc Trinh (2017)

  • PbZr0.4Ti0.6O3 (PZT) thin films have been conventionally fabricated on traditional silicon substrates with a platinum bottom electrode; however, as a consequence of unit cell mismatch, the films are difficult to form as an epitaxial-like growth. Hence, PZT films deposited on single-crystal niobium doped SrTiO3(111) substrates (Nb:STO) are promising to solve this issue thanks to the similar perovskite structure between PZT and STO. Essentially, Nb:STO material is a conductor, playing a part in both bottom electrode and epitaxial substrate. In this work, 200-nm-thick PZT films were successfully fabricated on Nb:STO substrates by a solution process. One obtained that PZT(111) peak starte...

  • 65.pdf.jpg
  • Article


  • Authors: Do, Hong Minh; Vu, Thi Huyen Trang; Bui, Nguyen Quoc Trinh (2014)

  • We have demonstrated ferroelectric-gate thin film transistors (FGTs) using solution-processed indium tin oxide (ITO) film as an oxide-semiconductor channel and Pb1.2Zr0.4Ti0.6O3 ferroelectric film as a gate insulator on a poly-crystalline 100-nm-STO/SiO2/Si substrate or a single-crystalline STO(111) wafer. The FGTs show a clear memory function with an on/off current ratio of more than 105 and a memory window of 2 V. It is interesting that even using solution-processed ITO channel, the saturated “on” current in the FGT reached as high as 4.6 mA at operation voltages of 8 V, corresponding to a field-effect mobility of 8.0 cm2/Vs, for the case of single-crystalline STO(111) wafer. The la...

  • Final_20062019_Le Thi Hien.pdf.jpg
  • Thesis


  • Authors: Lê, Thị Hiền, 1994-;  Advisor: Bui, Nguyen Quoc Trinh (2019)

  • In this study, CZO thin films, whose doping concentrations varied at 0%, 0.5%, 1.0%, 1.5% and 2.0%, were successfully fabricated by using sol-gel method. The annealing temperatures were 400oC, 450oC, and 500oC for all concentration conditions. XRD results revealed that the preferential orientations of CZO thin films are along with (100), (002) and (101). The best crystallization is corresponded to dopant concentration of 0.5%, and annealing temperature of 500oC. SEM observation indicates that the grain size is relatively uniform, but the surface morphology is porous. Also, the grain size is inversely proportional to Copper (Cu) doping concentration, but directly proportional t...

  • 00051000400.pdf.jpg
  • Theses


  • Authors: Lê, Thị Hiền;  Advisor: Bui, Nguyen Quoc Trinh (2019)

  • In this study, CZO thin films, whose doping concentrations varied at 0%, 0.5%, 1.0%, 1.5% and 2.0%, were successfully fabricated by using sol-gel method. The annealing temperatures were 400oC, 450oC, and 500oC for all concentration conditions. XRD results revealed that the preferential orientations of CZO thin films are along with (100), (002) and (101). The best crystallization is corresponded to dopant concentration of 0.5%, and annealing temperature of 500oC. SEM observation indicates that the grain size is relatively uniform, but the surface morphology is porous. Also, the grain size is inversely proportional to Copper (Cu) doping concentration, but directly proportional t...

Browsing by Author Bui, Nguyen Quoc Trinh

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 1 to 8 of 8
  • 00051000283.pdf.jpg
  • Thesis


  • Authors: Nguyen, Van Dung;  Advisor: Bui, Nguyen Quoc Trinh (2018)

  • Recently, metal oxide based thin film transistors (TFTs) have attracted significant attention for application in display industry, for examples, flexible display, and flat panel display because of their excellent performances. In covalent semiconductor consisting of sp3 orbital, the bond angle significantly affects to charge transport in the bottom of the conduction band, leading to low mobility and unsteady of silicon-based TFTs. However, the overlap between neighbor metal ns orbital in metal oxide semiconductor could happen in an amorphous phase because the carrier transport paths include both metal ns orbitals, which lead to high charge carrier mobility in amorphous structu...

  • 4265-97-8324-2-10-20180807.pdf.jpg
  • Article


  • Authors: Nguyen, Quang Hoa; Bui, Nguyen Quoc Trinh (2018)

  • Lanthanum nickel oxide LaNiO3 (LNO) isextensively known as one of typical perovskite-structured materials with metallic conductivity, which is suitable for the electrode application in electronic devices such as transistors or solar cells. Since LNO is a low-cost material and a simple fabrication process, it has been attracted much attention for commercialization. In this paper, we have focused on optimizing the fabrication process of LNO thin films on SiO2/Sisubstrate and Al foil by using asolution process. The crystal structure and surface morphology were characterized by using X-ray diffraction and field-emission scanning electron microscopy (FE-SEM), respectively. It was found tha...

  • 4265-97-8324-2-10-20180807.pdf.jpg
  • Article


  • Authors: Nguyen, Quang Hoa; Bui, Nguyen Quoc Trinh (2018)

  • Lanthanum nickel oxide LaNiO3 (LNO) isextensively known as one of typical perovskite-structured materials with metallic conductivity, which is suitable for the electrode application in electronic devices such as transistors or solar cells. Since LNO is a low-cost material and a simple fabrication process, it has been attracted much attention for commercialization. In this paper, we have focused on optimizing the fabrication process of LNO thin films on SiO2/Sisubstrate and Al foil by using asolution process. The crystal structure and surface morphology were characterized by using X-ray diffraction and field-emission scanning electron microscopy (FE-SEM), respectively. It was found tha...

  • 4351-97-8861-1-10-20190621.pdf.jpg
  • Article


  • Authors: Bui, Nguyen Quoc Trinh (2019)

  • A novel concept of NAND memory array has been proposed by using only ferroelectric-gate thin film transistors (FGTs), whose structure is constructed from a sol-gel ITO channel and a sol-gel stacked ferroelectric between Bi3.25La0.75Ti3O12 and PbZr0.52TiO0.48O3 (BLT/PZT) gate insulator. Interestingly, ferroelectric cells with a wide memory window of 3 V and a large on/off current ratio of 6 orders, have been successfully integrated in a NAND memory circuit. To protect data writing or reading from disturbance, ferroelectric transistor cells are directly used, instead of paraelectric transistor cells as usual. As a result, we have verified disturbance-free operation for data reading and ...

  • 4244-97-8195-1-10-20180103.pdf.jpg
  • Article


  • Authors: Hoang, Ha; Bui, Nguyen Quoc Trinh (2017)

  • PbZr0.4Ti0.6O3 (PZT) thin films have been conventionally fabricated on traditional silicon substrates with a platinum bottom electrode; however, as a consequence of unit cell mismatch, the films are difficult to form as an epitaxial-like growth. Hence, PZT films deposited on single-crystal niobium doped SrTiO3(111) substrates (Nb:STO) are promising to solve this issue thanks to the similar perovskite structure between PZT and STO. Essentially, Nb:STO material is a conductor, playing a part in both bottom electrode and epitaxial substrate. In this work, 200-nm-thick PZT films were successfully fabricated on Nb:STO substrates by a solution process. One obtained that PZT(111) peak starte...

  • 65.pdf.jpg
  • Article


  • Authors: Do, Hong Minh; Vu, Thi Huyen Trang; Bui, Nguyen Quoc Trinh (2014)

  • We have demonstrated ferroelectric-gate thin film transistors (FGTs) using solution-processed indium tin oxide (ITO) film as an oxide-semiconductor channel and Pb1.2Zr0.4Ti0.6O3 ferroelectric film as a gate insulator on a poly-crystalline 100-nm-STO/SiO2/Si substrate or a single-crystalline STO(111) wafer. The FGTs show a clear memory function with an on/off current ratio of more than 105 and a memory window of 2 V. It is interesting that even using solution-processed ITO channel, the saturated “on” current in the FGT reached as high as 4.6 mA at operation voltages of 8 V, corresponding to a field-effect mobility of 8.0 cm2/Vs, for the case of single-crystalline STO(111) wafer. The la...

  • Final_20062019_Le Thi Hien.pdf.jpg
  • Thesis


  • Authors: Lê, Thị Hiền, 1994-;  Advisor: Bui, Nguyen Quoc Trinh (2019)

  • In this study, CZO thin films, whose doping concentrations varied at 0%, 0.5%, 1.0%, 1.5% and 2.0%, were successfully fabricated by using sol-gel method. The annealing temperatures were 400oC, 450oC, and 500oC for all concentration conditions. XRD results revealed that the preferential orientations of CZO thin films are along with (100), (002) and (101). The best crystallization is corresponded to dopant concentration of 0.5%, and annealing temperature of 500oC. SEM observation indicates that the grain size is relatively uniform, but the surface morphology is porous. Also, the grain size is inversely proportional to Copper (Cu) doping concentration, but directly proportional t...

  • 00051000400.pdf.jpg
  • Theses


  • Authors: Lê, Thị Hiền;  Advisor: Bui, Nguyen Quoc Trinh (2019)

  • In this study, CZO thin films, whose doping concentrations varied at 0%, 0.5%, 1.0%, 1.5% and 2.0%, were successfully fabricated by using sol-gel method. The annealing temperatures were 400oC, 450oC, and 500oC for all concentration conditions. XRD results revealed that the preferential orientations of CZO thin films are along with (100), (002) and (101). The best crystallization is corresponded to dopant concentration of 0.5%, and annealing temperature of 500oC. SEM observation indicates that the grain size is relatively uniform, but the surface morphology is porous. Also, the grain size is inversely proportional to Copper (Cu) doping concentration, but directly proportional t...