Browsing by Author Vijayan, Lekshmi

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  • Low-power-organic-field-effect-transistors-wi_2018_Journal-of-Science--Advan.pdf.jpg
  • Article


  • Authors: Vijayan, Lekshmi; Thomas, Anna; Kumar, K. Shreekrishna; Jinesh, K.B. (2018)

  • Bottom gate, top contact Organic Field Effect Transistors (OFETs) were fabricated using copper phthalocy-anine (CuPc) as an active layer. The electrical properties of OFETs fabricated with CuPc annealed at different annealing temperatures and different channel length to width (L/W) ratios were studied. The transfer characteristics of the devices appear to improve with annealing temperature of CuPc and increasing L/W ratios of the devices. Upon annealing, the field effect mobility increased from 0.03±0.004 cm2/V to 1.3±0.02 cm2/V. Similarly, the interface state density reduced from 5.14±0.39 x 10^11cm^(-2)eV^(-1) for the device fabricatedusing as deposited CuPc, to 2.41±0.05 x 10^11cm^...

Browsing by Author Vijayan, Lekshmi

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 1 to 1 of 1
  • Low-power-organic-field-effect-transistors-wi_2018_Journal-of-Science--Advan.pdf.jpg
  • Article


  • Authors: Vijayan, Lekshmi; Thomas, Anna; Kumar, K. Shreekrishna; Jinesh, K.B. (2018)

  • Bottom gate, top contact Organic Field Effect Transistors (OFETs) were fabricated using copper phthalocy-anine (CuPc) as an active layer. The electrical properties of OFETs fabricated with CuPc annealed at different annealing temperatures and different channel length to width (L/W) ratios were studied. The transfer characteristics of the devices appear to improve with annealing temperature of CuPc and increasing L/W ratios of the devices. Upon annealing, the field effect mobility increased from 0.03±0.004 cm2/V to 1.3±0.02 cm2/V. Similarly, the interface state density reduced from 5.14±0.39 x 10^11cm^(-2)eV^(-1) for the device fabricatedusing as deposited CuPc, to 2.41±0.05 x 10^11cm^...