Browsing by Subject Co-sputtering Process

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  • Authors: Hoang, Ngoc Lam Huong; Nguyen, Minh Hieu; Nguyen, Thi Tien; Nguyen, Tran Thuat; Nguyen, Hoang Luong (2017)

  • Nb-doped Ti thin films were fabricated by co-sputtering of TiO2 doped 6 at% by Nb2O5 and Nb targets. The anatase polycrystalline thin films were obtained by post-annealing at 350oC in vacuum atmosphere. The electrical properties of the films were determined by the Hall method using standard clove-leaf geometry. When the Nb concentration increased, the number of electron increased from 4×1018 cm-3 to 2.4×1020 cm-3, while the resistivity fell down from 10 to 3.5×10-3 Ωcm. It means that this co-sputtering process can be considered as a method to improve conducting properties of Nb:Ti thin films. With low resistivity and high optical transmittance (higher than 80% in the visible range), t...

Browsing by Subject Co-sputtering Process

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 1 to 1 of 1
  • 4091-97-8104-1-10-20171016.pdf.jpg
  • Article


  • Authors: Hoang, Ngoc Lam Huong; Nguyen, Minh Hieu; Nguyen, Thi Tien; Nguyen, Tran Thuat; Nguyen, Hoang Luong (2017)

  • Nb-doped Ti thin films were fabricated by co-sputtering of TiO2 doped 6 at% by Nb2O5 and Nb targets. The anatase polycrystalline thin films were obtained by post-annealing at 350oC in vacuum atmosphere. The electrical properties of the films were determined by the Hall method using standard clove-leaf geometry. When the Nb concentration increased, the number of electron increased from 4×1018 cm-3 to 2.4×1020 cm-3, while the resistivity fell down from 10 to 3.5×10-3 Ωcm. It means that this co-sputtering process can be considered as a method to improve conducting properties of Nb:Ti thin films. With low resistivity and high optical transmittance (higher than 80% in the visible range), t...