Browsing by Subject current-voltage characteristics

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  • 113.pdf.jpg
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  • Authors: Ta, Dinh Canh; Nguyen, Viet Tuyen; Nguyen, Ngoc Long; Vo, Ly Thanh Ha (2010)

  • n-ZnO:hVp-Si heterojunctions have been fabricated by sputter deposition of nZnO:ln on p-Si substrates. The lowest resistivity n-ZnO:In film was obtained at a substrate temperature of 150oC using a ZnO target doped with 2 wt% In2O3. At substrate temperature above 300oC the resistivity of the film increases as the carrier concentration decreases. This implies a significant decrease in the donor impurity, which is ascribed to evaporation of the indium during film growth. The wavelength dependent properties of the photo-response for the heterojunction were investigated in detail by studying the effect of light illumination on current - voltage (I-V) characteristic, photocurrent spectra ...

  • 78.pdf.jpg
  • Article


  • Authors: Nguyen, Kien Cuong (2011)

  • This paper describes changes in current-voltage (I-V) characteristic of an organic light-emitting device (OLED) stacked as a multilayer of ITO/MEH-PPV/Alq3/Al. The ordered, stacked ITO/MEH-PPV/Alq3/Al multi-layers were fabricated by spin-coating and thermal vacuum evaporation methods. First, dissolved MEH-PPV solution was spin-coated on ITO-electrodes that had been covered on a glass-slide. Subsequently, an Alq3 layer was evaporated thermally on the MEH-PPV-coated layer. Finally, an Al-electrode was evaporated also on the electron transport layer. UV-vis absorption and photoluminescent characterization of the MEH-PPV and Alq3 layer as well as their surface images were performed. All...

Browsing by Subject current-voltage characteristics

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 1 to 2 of 2
  • 113.pdf.jpg
  • Article


  • Authors: Ta, Dinh Canh; Nguyen, Viet Tuyen; Nguyen, Ngoc Long; Vo, Ly Thanh Ha (2010)

  • n-ZnO:hVp-Si heterojunctions have been fabricated by sputter deposition of nZnO:ln on p-Si substrates. The lowest resistivity n-ZnO:In film was obtained at a substrate temperature of 150oC using a ZnO target doped with 2 wt% In2O3. At substrate temperature above 300oC the resistivity of the film increases as the carrier concentration decreases. This implies a significant decrease in the donor impurity, which is ascribed to evaporation of the indium during film growth. The wavelength dependent properties of the photo-response for the heterojunction were investigated in detail by studying the effect of light illumination on current - voltage (I-V) characteristic, photocurrent spectra ...

  • 78.pdf.jpg
  • Article


  • Authors: Nguyen, Kien Cuong (2011)

  • This paper describes changes in current-voltage (I-V) characteristic of an organic light-emitting device (OLED) stacked as a multilayer of ITO/MEH-PPV/Alq3/Al. The ordered, stacked ITO/MEH-PPV/Alq3/Al multi-layers were fabricated by spin-coating and thermal vacuum evaporation methods. First, dissolved MEH-PPV solution was spin-coated on ITO-electrodes that had been covered on a glass-slide. Subsequently, an Alq3 layer was evaporated thermally on the MEH-PPV-coated layer. Finally, an Al-electrode was evaporated also on the electron transport layer. UV-vis absorption and photoluminescent characterization of the MEH-PPV and Alq3 layer as well as their surface images were performed. All...