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dc.contributor.authorGhatak, Kamakhya Prasad-
dc.contributor.authorBhattacharya, Sitangshu-
dc.contributor.authorDe, Debashis-
dc.date.accessioned2017-04-18T03:47:23Z-
dc.date.available2017-04-18T03:47:23Z-
dc.date.issued2009-
dc.identifier.isbn978-3-540-79556-8-
dc.identifier.urihttp://repository.vnu.edu.vn/handle/VNU_123/30512-
dc.description.abstractThis is the first book solely devoted to the Einstein relation in compound semiconductors and their nanostructures. The materials considered are nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, inversion layers, superlattices of nonparabolic materials with graded interfaces under magnetic quantization, quantum wire superlattices with different band structures and other field assisted systems. The influence of light on the Einstein relation in semiconductors and their nanostructures has also been investigated in detail by formulating the respective dispersion relations which control the transport in such quantum effect devices. The book deals with many open research problems.-
dc.format.extent471 p.-
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.subjectPhysicsen_US
dc.subjectAstronomy ; Compound semiconductors ; Nanostructured materials ; Semiconductors -- Diffusion.en_US
dc.subject.ddc621.38152-
dc.titleEinstein Relation in Compound Semiconductors and their Nanostructuresen_US
dc.typeBooken_US
Appears in Collections:Khoa học Vật lý & Kỹ thuật


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  • Full metadata record
    DC FieldValueLanguage
    dc.contributor.authorGhatak, Kamakhya Prasad-
    dc.contributor.authorBhattacharya, Sitangshu-
    dc.contributor.authorDe, Debashis-
    dc.date.accessioned2017-04-18T03:47:23Z-
    dc.date.available2017-04-18T03:47:23Z-
    dc.date.issued2009-
    dc.identifier.isbn978-3-540-79556-8-
    dc.identifier.urihttp://repository.vnu.edu.vn/handle/VNU_123/30512-
    dc.description.abstractThis is the first book solely devoted to the Einstein relation in compound semiconductors and their nanostructures. The materials considered are nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, inversion layers, superlattices of nonparabolic materials with graded interfaces under magnetic quantization, quantum wire superlattices with different band structures and other field assisted systems. The influence of light on the Einstein relation in semiconductors and their nanostructures has also been investigated in detail by formulating the respective dispersion relations which control the transport in such quantum effect devices. The book deals with many open research problems.-
    dc.format.extent471 p.-
    dc.language.isoenen_US
    dc.publisherSpringeren_US
    dc.subjectPhysicsen_US
    dc.subjectAstronomy ; Compound semiconductors ; Nanostructured materials ; Semiconductors -- Diffusion.en_US
    dc.subject.ddc621.38152-
    dc.titleEinstein Relation in Compound Semiconductors and their Nanostructuresen_US
    dc.typeBooken_US
    Appears in Collections:Khoa học Vật lý & Kỹ thuật


  • 310.pdf
    • Size : 11,5 MB

    • Format : Adobe PDF

    • View : 
    • Download :