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dc.contributor.authorVijayan, Lekshmi-
dc.contributor.authorThomas, Anna-
dc.contributor.authorKumar, K. Shreekrishna-
dc.contributor.authorJinesh, K.B.-
dc.date.accessioned2018-10-10T08:30:14Z-
dc.date.available2018-10-10T08:30:14Z-
dc.date.issued2018-
dc.identifier.citationVijayan, L. et al. (2018). Low power organicfield effect transistors with copper phthalocyanine as active layer. Journal of Science: Advanced Materials and Devices, 3(3), 348-352.vi
dc.identifier.issn2468-2179-
dc.identifier.urihttp://repository.vnu.edu.vn/handle/VNU_123/62941-
dc.description.abstractBottom gate, top contact Organic Field Effect Transistors (OFETs) were fabricated using copper phthalocy-anine (CuPc) as an active layer. The electrical properties of OFETs fabricated with CuPc annealed at different annealing temperatures and different channel length to width (L/W) ratios were studied. The transfer characteristics of the devices appear to improve with annealing temperature of CuPc and increasing L/W ratios of the devices. Upon annealing, the field effect mobility increased from 0.03±0.004 cm2/V to 1.3±0.02 cm2/V. Similarly, the interface state density reduced from 5.14±0.39 x 10^11cm^(-2)eV^(-1) for the device fabricatedusing as deposited CuPc, to 2.41±0.05 x 10^11cm^(-2)eV^(-1) for the devicewith CuPc annealedat 80oC. The on/off current ratio increased from 10^2 for the as-deposited device, to 10^5 for the device with CuPc annealed at 80oC. The dependence of the subthreshold swing on the L/W ratio was also investigated.vi
dc.language.isoenvi
dc.publisherH. : ĐHQGHNvi
dc.relation.ispartofseriesJournal of Science: Advanced Materials and Devices;-
dc.rights© 2018 Elsevier B.V.-
dc.subjectOrganicfield effect transistorsvi
dc.subjectCuPcvi
dc.subjectScanning tunneling microscopevi
dc.subjectInterface trap densityvi
dc.subjectCarrier mobilityvi
dc.titleLow power organicfield effect transistors with copper phthalocyanine as active layervi
dc.typeArticlevi
dc.identifier.doihttps://doi.org/10.1016/j.jsamd.2018.08.002-
Appears in Collections:Advanced Materials and Devices


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  • Full metadata record
    DC FieldValueLanguage
    dc.contributor.authorVijayan, Lekshmi-
    dc.contributor.authorThomas, Anna-
    dc.contributor.authorKumar, K. Shreekrishna-
    dc.contributor.authorJinesh, K.B.-
    dc.date.accessioned2018-10-10T08:30:14Z-
    dc.date.available2018-10-10T08:30:14Z-
    dc.date.issued2018-
    dc.identifier.citationVijayan, L. et al. (2018). Low power organicfield effect transistors with copper phthalocyanine as active layer. Journal of Science: Advanced Materials and Devices, 3(3), 348-352.vi
    dc.identifier.issn2468-2179-
    dc.identifier.urihttp://repository.vnu.edu.vn/handle/VNU_123/62941-
    dc.description.abstractBottom gate, top contact Organic Field Effect Transistors (OFETs) were fabricated using copper phthalocy-anine (CuPc) as an active layer. The electrical properties of OFETs fabricated with CuPc annealed at different annealing temperatures and different channel length to width (L/W) ratios were studied. The transfer characteristics of the devices appear to improve with annealing temperature of CuPc and increasing L/W ratios of the devices. Upon annealing, the field effect mobility increased from 0.03±0.004 cm2/V to 1.3±0.02 cm2/V. Similarly, the interface state density reduced from 5.14±0.39 x 10^11cm^(-2)eV^(-1) for the device fabricatedusing as deposited CuPc, to 2.41±0.05 x 10^11cm^(-2)eV^(-1) for the devicewith CuPc annealedat 80oC. The on/off current ratio increased from 10^2 for the as-deposited device, to 10^5 for the device with CuPc annealed at 80oC. The dependence of the subthreshold swing on the L/W ratio was also investigated.vi
    dc.language.isoenvi
    dc.publisherH. : ĐHQGHNvi
    dc.relation.ispartofseriesJournal of Science: Advanced Materials and Devices;-
    dc.rights© 2018 Elsevier B.V.-
    dc.subjectOrganicfield effect transistorsvi
    dc.subjectCuPcvi
    dc.subjectScanning tunneling microscopevi
    dc.subjectInterface trap densityvi
    dc.subjectCarrier mobilityvi
    dc.titleLow power organicfield effect transistors with copper phthalocyanine as active layervi
    dc.typeArticlevi
    dc.identifier.doihttps://doi.org/10.1016/j.jsamd.2018.08.002-
    Appears in Collections:Advanced Materials and Devices


  • Low-power-organic-field-effect-transistors-wi_2018_Journa...
    • Size : 1,14 MB

    • Format : Adobe PDF

    • View : 
    • Download :