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dc.contributor.advisorBui, Nguyen Quoc Trinh-
dc.contributor.authorLê, Thị Hiền-
dc.date.accessioned2020-02-15T07:30:49Z-
dc.date.available2020-02-15T07:30:49Z-
dc.date.issued2019-
dc.identifier.citationLê, T. H. (2019). Undoped and doped ZnO-based thin films by a solution process: preparation and characterization. Master’s thesis, Vietnam National University, Hanoi-
dc.identifier.degreecodePilot-
dc.identifier.urihttp://repository.vnu.edu.vn/handle/VNU_123/70384-
dc.description.abstractIn this study, CZO thin films, whose doping concentrations varied at 0%, 0.5%, 1.0%, 1.5% and 2.0%, were successfully fabricated by using sol-gel method. The annealing temperatures were 400oC, 450oC, and 500oC for all concentration conditions. XRD results revealed that the preferential orientations of CZO thin films are along with (100), (002) and (101). The best crystallization is corresponded to dopant concentration of 0.5%, and annealing temperature of 500oC. SEM observation indicates that the grain size is relatively uniform, but the surface morphology is porous. Also, the grain size is inversely proportional to Copper (Cu) doping concentration, but directly proportional to the annealing temperature. Optical analysis points out that the CZO thin films absorb most strongly at wavelengths ranged from 360 to 375 nm; and bandgap energy of CZO thin films was in range of 3.13 - 3.23 eV. Further findings of CZO thin films are discussed in detail in the thesis.-
dc.format.extent72 p.-
dc.language.isoen-
dc.subjectCông nghệ Nanô-
dc.subject.ddc620.5-
dc.titleUndoped and doped ZnO-based thin films by a solution process: preparation and characterization-
dc.typeTheses-
dc.identifier.licLE-H-
dc.description.degreeNanotechnology-
dc.contributor.schoolĐHQGHN - Trường Đại học Việt Nhật-
Appears in Collections:VJU - Master Theses


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  • Full metadata record
    DC FieldValueLanguage
    dc.contributor.advisorBui, Nguyen Quoc Trinh-
    dc.contributor.authorLê, Thị Hiền-
    dc.date.accessioned2020-02-15T07:30:49Z-
    dc.date.available2020-02-15T07:30:49Z-
    dc.date.issued2019-
    dc.identifier.citationLê, T. H. (2019). Undoped and doped ZnO-based thin films by a solution process: preparation and characterization. Master’s thesis, Vietnam National University, Hanoi-
    dc.identifier.degreecodePilot-
    dc.identifier.urihttp://repository.vnu.edu.vn/handle/VNU_123/70384-
    dc.description.abstractIn this study, CZO thin films, whose doping concentrations varied at 0%, 0.5%, 1.0%, 1.5% and 2.0%, were successfully fabricated by using sol-gel method. The annealing temperatures were 400oC, 450oC, and 500oC for all concentration conditions. XRD results revealed that the preferential orientations of CZO thin films are along with (100), (002) and (101). The best crystallization is corresponded to dopant concentration of 0.5%, and annealing temperature of 500oC. SEM observation indicates that the grain size is relatively uniform, but the surface morphology is porous. Also, the grain size is inversely proportional to Copper (Cu) doping concentration, but directly proportional to the annealing temperature. Optical analysis points out that the CZO thin films absorb most strongly at wavelengths ranged from 360 to 375 nm; and bandgap energy of CZO thin films was in range of 3.13 - 3.23 eV. Further findings of CZO thin films are discussed in detail in the thesis.-
    dc.format.extent72 p.-
    dc.language.isoen-
    dc.subjectCông nghệ Nanô-
    dc.subject.ddc620.5-
    dc.titleUndoped and doped ZnO-based thin films by a solution process: preparation and characterization-
    dc.typeTheses-
    dc.identifier.licLE-H-
    dc.description.degreeNanotechnology-
    dc.contributor.schoolĐHQGHN - Trường Đại học Việt Nhật-
    Appears in Collections:VJU - Master Theses


  • 00051000400.pdf
    • Size : 3,83 MB

    • Format : Adobe PDF

    • View : 
    • Download :