Browsing by Author Bui, Nguyen Quoc Trinh

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  • 4265-97-8324-2-10-20180807.pdf.jpg
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  • Authors: Nguyen, Quang Hoa; Bui, Nguyen Quoc Trinh (2018)

  • Lanthanum nickel oxide LaNiO3 (LNO) isextensively known as one of typical perovskite-structured materials with metallic conductivity, which is suitable for the electrode application in electronic devices such as transistors or solar cells. Since LNO is a low-cost material and a simple fabrication process, it has been attracted much attention for commercialization. In this paper, we have focused on optimizing the fabrication process of LNO thin films on SiO2/Sisubstrate and Al foil by using asolution process. The crystal structure and surface morphology were characterized by using X-ray diffraction and field-emission scanning electron microscopy (FE-SEM), respectively. It was found tha...

  • 4265-97-8324-2-10-20180807.pdf.jpg
  • Article


  • Authors: Nguyen, Quang Hoa; Bui, Nguyen Quoc Trinh (2018)

  • Lanthanum nickel oxide LaNiO3 (LNO) isextensively known as one of typical perovskite-structured materials with metallic conductivity, which is suitable for the electrode application in electronic devices such as transistors or solar cells. Since LNO is a low-cost material and a simple fabrication process, it has been attracted much attention for commercialization. In this paper, we have focused on optimizing the fabrication process of LNO thin films on SiO2/Sisubstrate and Al foil by using asolution process. The crystal structure and surface morphology were characterized by using X-ray diffraction and field-emission scanning electron microscopy (FE-SEM), respectively. It was found tha...

  • 4244-97-8195-1-10-20180103.pdf.jpg
  • Article


  • Authors: Hoang, Ha; Bui, Nguyen Quoc Trinh (2017)

  • PbZr0.4Ti0.6O3 (PZT) thin films have been conventionally fabricated on traditional silicon substrates with a platinum bottom electrode; however, as a consequence of unit cell mismatch, the films are difficult to form as an epitaxial-like growth. Hence, PZT films deposited on single-crystal niobium doped SrTiO3(111) substrates (Nb:STO) are promising to solve this issue thanks to the similar perovskite structure between PZT and STO. Essentially, Nb:STO material is a conductor, playing a part in both bottom electrode and epitaxial substrate. In this work, 200-nm-thick PZT films were successfully fabricated on Nb:STO substrates by a solution process. One obtained that PZT(111) peak starte...

  • 65.pdf.jpg
  • Article


  • Authors: Do, Hong Minh; Vu, Thi Huyen Trang; Bui, Nguyen Quoc Trinh (2014)

  • We have demonstrated ferroelectric-gate thin film transistors (FGTs) using solution-processed indium tin oxide (ITO) film as an oxide-semiconductor channel and Pb1.2Zr0.4Ti0.6O3 ferroelectric film as a gate insulator on a poly-crystalline 100-nm-STO/SiO2/Si substrate or a single-crystalline STO(111) wafer. The FGTs show a clear memory function with an on/off current ratio of more than 105 and a memory window of 2 V. It is interesting that even using solution-processed ITO channel, the saturated “on” current in the FGT reached as high as 4.6 mA at operation voltages of 8 V, corresponding to a field-effect mobility of 8.0 cm2/Vs, for the case of single-crystalline STO(111) wafer. The la...

Browsing by Author Bui, Nguyen Quoc Trinh

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 1 to 4 of 4
  • 4265-97-8324-2-10-20180807.pdf.jpg
  • Article


  • Authors: Nguyen, Quang Hoa; Bui, Nguyen Quoc Trinh (2018)

  • Lanthanum nickel oxide LaNiO3 (LNO) isextensively known as one of typical perovskite-structured materials with metallic conductivity, which is suitable for the electrode application in electronic devices such as transistors or solar cells. Since LNO is a low-cost material and a simple fabrication process, it has been attracted much attention for commercialization. In this paper, we have focused on optimizing the fabrication process of LNO thin films on SiO2/Sisubstrate and Al foil by using asolution process. The crystal structure and surface morphology were characterized by using X-ray diffraction and field-emission scanning electron microscopy (FE-SEM), respectively. It was found tha...

  • 4265-97-8324-2-10-20180807.pdf.jpg
  • Article


  • Authors: Nguyen, Quang Hoa; Bui, Nguyen Quoc Trinh (2018)

  • Lanthanum nickel oxide LaNiO3 (LNO) isextensively known as one of typical perovskite-structured materials with metallic conductivity, which is suitable for the electrode application in electronic devices such as transistors or solar cells. Since LNO is a low-cost material and a simple fabrication process, it has been attracted much attention for commercialization. In this paper, we have focused on optimizing the fabrication process of LNO thin films on SiO2/Sisubstrate and Al foil by using asolution process. The crystal structure and surface morphology were characterized by using X-ray diffraction and field-emission scanning electron microscopy (FE-SEM), respectively. It was found tha...

  • 4244-97-8195-1-10-20180103.pdf.jpg
  • Article


  • Authors: Hoang, Ha; Bui, Nguyen Quoc Trinh (2017)

  • PbZr0.4Ti0.6O3 (PZT) thin films have been conventionally fabricated on traditional silicon substrates with a platinum bottom electrode; however, as a consequence of unit cell mismatch, the films are difficult to form as an epitaxial-like growth. Hence, PZT films deposited on single-crystal niobium doped SrTiO3(111) substrates (Nb:STO) are promising to solve this issue thanks to the similar perovskite structure between PZT and STO. Essentially, Nb:STO material is a conductor, playing a part in both bottom electrode and epitaxial substrate. In this work, 200-nm-thick PZT films were successfully fabricated on Nb:STO substrates by a solution process. One obtained that PZT(111) peak starte...

  • 65.pdf.jpg
  • Article


  • Authors: Do, Hong Minh; Vu, Thi Huyen Trang; Bui, Nguyen Quoc Trinh (2014)

  • We have demonstrated ferroelectric-gate thin film transistors (FGTs) using solution-processed indium tin oxide (ITO) film as an oxide-semiconductor channel and Pb1.2Zr0.4Ti0.6O3 ferroelectric film as a gate insulator on a poly-crystalline 100-nm-STO/SiO2/Si substrate or a single-crystalline STO(111) wafer. The FGTs show a clear memory function with an on/off current ratio of more than 105 and a memory window of 2 V. It is interesting that even using solution-processed ITO channel, the saturated “on” current in the FGT reached as high as 4.6 mA at operation voltages of 8 V, corresponding to a field-effect mobility of 8.0 cm2/Vs, for the case of single-crystalline STO(111) wafer. The la...