Recently, metal oxide based thin film transistors (TFTs) have attracted significant attention for application in display industry, for examples, flexible display, and flat panel display because of their excellent performances. In covalent semiconductor consisting of sp3 orbital, the bond angle significantly affects to charge transport in the bottom of the conduction band, leading to low mobility and unsteady of silicon-based TFTs. However, the overlap between neighbor metal ns orbital in metal oxide semiconductor could happen in an amorphous phase because the carrier transport paths include both metal ns orbitals, which lead to high charge carrier mobility in amorphous structures [1].
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Recently, metal oxide based thin film transistors (TFTs) have attracted significant attention for application in display industry, for examples, flexible display, and flat panel display because of their excellent performances. In covalent semiconductor consisting of sp3 orbital, the bond angle significantly affects to charge transport in the bottom of the conduction band, leading to low mobility and unsteady of silicon-based TFTs. However, the overlap between neighbor metal ns orbital in metal oxide semiconductor could happen in an amorphous phase because the carrier transport paths include both metal ns orbitals, which lead to high charge carrier mobility in amorphous structures [1].
