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Browsing by Author Do, Hong Minh

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  • Huge on-Current Ferroelectric-Gate Thin Film Transistor with Solution-Processed Indium Tin Oxide Channel

    • Authors: Do, Hong Minh; Vu, Thi Huyen Trang; Bui, Nguyen Quoc Trinh (2014)

  • We have demonstrated ferroelectric-gate thin film transistors (FGTs) using solution-processed indium tin oxide (ITO) film as an oxide-semiconductor channel and Pb1.2Zr0.4Ti0.6O3 ferroelectric film as a gate insulator on a poly-crystalline 100-nm-STO/SiO2/Si substrate or a single-crystalline STO(111) wafer. The FGTs show a clear memory function with an on/off current ratio of more than 105 and a memory window of 2 V. It is interesting that even using solution-processed ITO channel, the saturated “on” current in the FGT reached as high as 4.6 mA at operation voltages of 8 V, corresponding to a field-effect mobility of 8.0 cm2/Vs, for the case of single-crystalline STO(111) wafer. The la...
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  • Journal Article

  • Solution-processable zinc oxide based thin films with different aluminum doping concentrations

    • Authors: Bui, Nguyen Quoc Trinh; Truong, Dinh Chien; Nguyen, Quang Hoa; Do, Hong Minh (2020)

  • Al doped zinc oxide (AZO) thin films are attempted to be formed on glass substrates via solution processing with 0, 0.5, 1, 2, 3, and 4 at% Al doping concentrations. Analysis of X-ray diffraction patterns and scanning electron microscopy micrographs indicate that the AZO thin films belong to the wurtzite hexagonal structure with (100), (002), (101), (102), (110), (103), (112) and (201) orientations, and show that the grain size of AZO thin films decreases with higher Al doping concentrations. Optical and electrical properties of the AZO thin films are characterized from using a UV/vis spectrometer and a four-probe measurement system, respectively. The AZO thin films obtained have a mi...

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Browsing by Author Do, Hong Minh

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 1 to 2 of 2
  • 65.pdf.jpg
  • Article

  • Huge on-Current Ferroelectric-Gate Thin Film Transistor with Solution-Processed Indium Tin Oxide Channel

    • Authors: Do, Hong Minh; Vu, Thi Huyen Trang; Bui, Nguyen Quoc Trinh (2014)

  • We have demonstrated ferroelectric-gate thin film transistors (FGTs) using solution-processed indium tin oxide (ITO) film as an oxide-semiconductor channel and Pb1.2Zr0.4Ti0.6O3 ferroelectric film as a gate insulator on a poly-crystalline 100-nm-STO/SiO2/Si substrate or a single-crystalline STO(111) wafer. The FGTs show a clear memory function with an on/off current ratio of more than 105 and a memory window of 2 V. It is interesting that even using solution-processed ITO channel, the saturated “on” current in the FGT reached as high as 4.6 mA at operation voltages of 8 V, corresponding to a field-effect mobility of 8.0 cm2/Vs, for the case of single-crystalline STO(111) wafer. The la...
  • item.jpg
  • Journal Article

  • Solution-processable zinc oxide based thin films with different aluminum doping concentrations

    • Authors: Bui, Nguyen Quoc Trinh; Truong, Dinh Chien; Nguyen, Quang Hoa; Do, Hong Minh (2020)

  • Al doped zinc oxide (AZO) thin films are attempted to be formed on glass substrates via solution processing with 0, 0.5, 1, 2, 3, and 4 at% Al doping concentrations. Analysis of X-ray diffraction patterns and scanning electron microscopy micrographs indicate that the AZO thin films belong to the wurtzite hexagonal structure with (100), (002), (101), (102), (110), (103), (112) and (201) orientations, and show that the grain size of AZO thin films decreases with higher Al doping concentrations. Optical and electrical properties of the AZO thin films are characterized from using a UV/vis spectrometer and a four-probe measurement system, respectively. The AZO thin films obtained have a mi...