In this study, SnO2:Ni2+ powders with dopant contents ranging from 0.0 to 12 mol% were synthesized by sol-gel method. The samples were characterized by X-ray diffraction (XRD) Raman spectroscopy, energy-dispersive X-ray spectrometer (EDS) and photoluminescense (PL) spectra. The XRD analysis shows that the samples doped with low Ni- concentrations exhibited single SnO2crystalline phase, whereas the samples doped with high Ni- concentrations exhibited a mixture of SnO2 and NiO phases. The lattice parameters of the SnO2 host were independent of Ni2+ dopant content, while Raman mode positions were dependent on Ni2+ dopant content. The PL spectrum of the undoped SnO2 was characterized by the emission peaks due to near band edge (NBE) emission and the violet emission peaks associated with surface dangling bonds or oxygen vacancies and Sn interstitials.
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In this study, SnO2:Ni2+ powders with dopant contents ranging from 0.0 to 12 mol% were synthesized by sol-gel method. The samples were characterized by X-ray diffraction (XRD) Raman spectroscopy, energy-dispersive X-ray spectrometer (EDS) and photoluminescense (PL) spectra. The XRD analysis shows that the samples doped with low Ni- concentrations exhibited single SnO2crystalline phase, whereas the samples doped with high Ni- concentrations exhibited a mixture of SnO2 and NiO phases. The lattice parameters of the SnO2 host were independent of Ni2+ dopant content, while Raman mode positions were dependent on Ni2+ dopant content. The PL spectrum of the undoped SnO2 was characterized by the emission peaks due to near band edge (NBE) emission and the violet emission peaks associated with surface dangling bonds or oxygen vacancies and Sn interstitials.