| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Le, Thi Giang | - |
| dc.contributor.author | Nguyen, Manh An | - |
| dc.date.accessioned | 2017-08-09T07:35:42Z | - |
| dc.date.available | 2017-08-09T07:35:42Z | - |
| dc.date.issued | 2014 | - |
| dc.identifier.citation | Le, T. G. & Nguyen, M. A. (2014). Segregation of Manganese Atoms during the Growth of Ge1-xMnx Nanocolumns on Ge (001). VNU Journal of Science: Mathematics – Physics, 30(2), 10-17. | - |
| dc.identifier.issn | 2588-1124 | - |
| dc.identifier.uri | http://repository.vnu.edu.vn/handle/VNU_123/56059 | - |
| dc.description.abstract | High resolution - transmission electron microscopy (HR-TEM), along with Reflection High-Energy Electron Diffraction (RHEED) and Laser pulse atom probe tomography (LP- APT) were used to investigate the growth kinetics of Ge1-xMnx nanocolumn on Ge(001) and the mechanism of Ge1-xMnx nanocolumn formation. The results evidence that during the deposition of Ge1-xMnx film, Mn atoms diffuse into the Ge matrix to form Mn-rich regions and the upward segregation of Mn atoms along the [001] direction is the origin of the Mn concentration enrichment inside the nanocolumns. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | H. : ĐHQGHN | en_US |
| dc.relation.ispartofseries | VNU Journal of Science: Mathematics – Physics | - |
| dc.subject | Diluted magnetic semiconductors | en_US |
| dc.subject | nanocolumns | en_US |
| dc.subject | Ge3Mn5 clusters | en_US |
| dc.subject | Mn segregation | en_US |
| dc.title | Segregation of Manganese Atoms during the Growth of Ge1-xMnx Nanocolumns on Ge (001) | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | Mathematics and Physics | |
Readership Map
Content Distribution
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Le, Thi Giang | - |
| dc.contributor.author | Nguyen, Manh An | - |
| dc.date.accessioned | 2017-08-09T07:35:42Z | - |
| dc.date.available | 2017-08-09T07:35:42Z | - |
| dc.date.issued | 2014 | - |
| dc.identifier.citation | Le, T. G. & Nguyen, M. A. (2014). Segregation of Manganese Atoms during the Growth of Ge1-xMnx Nanocolumns on Ge (001). VNU Journal of Science: Mathematics – Physics, 30(2), 10-17. | - |
| dc.identifier.issn | 2588-1124 | - |
| dc.identifier.uri | http://repository.vnu.edu.vn/handle/VNU_123/56059 | - |
| dc.description.abstract | High resolution - transmission electron microscopy (HR-TEM), along with Reflection High-Energy Electron Diffraction (RHEED) and Laser pulse atom probe tomography (LP- APT) were used to investigate the growth kinetics of Ge1-xMnx nanocolumn on Ge(001) and the mechanism of Ge1-xMnx nanocolumn formation. The results evidence that during the deposition of Ge1-xMnx film, Mn atoms diffuse into the Ge matrix to form Mn-rich regions and the upward segregation of Mn atoms along the [001] direction is the origin of the Mn concentration enrichment inside the nanocolumns. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | H. : ĐHQGHN | en_US |
| dc.relation.ispartofseries | VNU Journal of Science: Mathematics – Physics | - |
| dc.subject | Diluted magnetic semiconductors | en_US |
| dc.subject | nanocolumns | en_US |
| dc.subject | Ge3Mn5 clusters | en_US |
| dc.subject | Mn segregation | en_US |
| dc.title | Segregation of Manganese Atoms during the Growth of Ge1-xMnx Nanocolumns on Ge (001) | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | Mathematics and Physics | |
