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dc.contributor.authorTrinh, Dinh Cuong-
dc.contributor.authorNguyen, Viet Hung-
dc.contributor.authorVu, Le Ha-
dc.contributor.authorPhung, Anh Tuan-
dc.contributor.authorDo, Thi Huong Giang-
dc.date.accessioned2022-04-04T07:58:29Z-
dc.date.available2022-04-04T07:58:29Z-
dc.date.issued2020-
dc.identifier.citationTrinh, D. C., ... et al. (2020). Giant magnetoelectric effects in serial-parallel connected Metglas/PZT arrays with magnetostrictively homogeneous laminates. Journal of Science: Advanced Materials and Devices, 5 (3), tr. 354-360.vi
dc.identifier.urihttp://repository.vnu.edu.vn/handle/VNU_123/139480-
dc.description.abstractTo ensure the magnetostrictive softness, the homogeneity, the decrease of the shear-lag effect and the space-saving construction of narrowed longitudinal-transverse L-T magnetoelectric (ME) composites, a novel parallel-connected-multi-bars (PCMB) geometry of PZT/Metglas is proposed and investigated by simulation and experiment. In this case, Metglas layers are structured in different geometries from the conventional single bar (c-SB) to conventional separated multiple bars (c-SMB), elongated separate multi-bar (e-SMB) and n-magnetic-bar based PCMB (n-PCMB). This n-PCMB geometry divides the conventional ME configuration into n parallel-connected ME units (n-PCMEU) according to the magnetic geometries. The optimal ME performance with the largest ME voltage coefficient αE of 630 V/cm.Oe is achieved in PCMEU with two Metglas bars (n = 2). The ME voltage coefficient can be further enhanced by integrating m of these optimal PCMEUs in series to form a serial-parallel ME unit array m-S (n-PMEU)A. The αE value increases by a factor of 3.6 and reaches 2.238 kV/cm.Oe for 4-S (2-PMEU)A, a factor that is almost equal to m. The resulting 4-S (2-PMEU)A sensor possesses an extremely high sensitivity of 18.1 μV/nT, with a resolution of 10−1 nT.vi
dc.language.isoenvi
dc.publisherĐại học Quốc gia Hà Nộivi
dc.subjectMagnetoelectric effectvi
dc.subjectShape magnetic anisotropyvi
dc.subjectShear-lag effectvi
dc.subjectSerial-parallel connectionvi
dc.subjectLow magnetic field sensorsvi
dc.titleGiant magnetoelectric effects in serial-parallel connected Metglas/PZT arrays with magnetostrictively homogeneous laminatesvi
dc.typeJournal Articlevi
Appears in Collections:Advanced Materials and Devices


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  • Full metadata record
    DC FieldValueLanguage
    dc.contributor.authorTrinh, Dinh Cuong-
    dc.contributor.authorNguyen, Viet Hung-
    dc.contributor.authorVu, Le Ha-
    dc.contributor.authorPhung, Anh Tuan-
    dc.contributor.authorDo, Thi Huong Giang-
    dc.date.accessioned2022-04-04T07:58:29Z-
    dc.date.available2022-04-04T07:58:29Z-
    dc.date.issued2020-
    dc.identifier.citationTrinh, D. C., ... et al. (2020). Giant magnetoelectric effects in serial-parallel connected Metglas/PZT arrays with magnetostrictively homogeneous laminates. Journal of Science: Advanced Materials and Devices, 5 (3), tr. 354-360.vi
    dc.identifier.urihttp://repository.vnu.edu.vn/handle/VNU_123/139480-
    dc.description.abstractTo ensure the magnetostrictive softness, the homogeneity, the decrease of the shear-lag effect and the space-saving construction of narrowed longitudinal-transverse L-T magnetoelectric (ME) composites, a novel parallel-connected-multi-bars (PCMB) geometry of PZT/Metglas is proposed and investigated by simulation and experiment. In this case, Metglas layers are structured in different geometries from the conventional single bar (c-SB) to conventional separated multiple bars (c-SMB), elongated separate multi-bar (e-SMB) and n-magnetic-bar based PCMB (n-PCMB). This n-PCMB geometry divides the conventional ME configuration into n parallel-connected ME units (n-PCMEU) according to the magnetic geometries. The optimal ME performance with the largest ME voltage coefficient αE of 630 V/cm.Oe is achieved in PCMEU with two Metglas bars (n = 2). The ME voltage coefficient can be further enhanced by integrating m of these optimal PCMEUs in series to form a serial-parallel ME unit array m-S (n-PMEU)A. The αE value increases by a factor of 3.6 and reaches 2.238 kV/cm.Oe for 4-S (2-PMEU)A, a factor that is almost equal to m. The resulting 4-S (2-PMEU)A sensor possesses an extremely high sensitivity of 18.1 μV/nT, with a resolution of 10−1 nT.vi
    dc.language.isoenvi
    dc.publisherĐại học Quốc gia Hà Nộivi
    dc.subjectMagnetoelectric effectvi
    dc.subjectShape magnetic anisotropyvi
    dc.subjectShear-lag effectvi
    dc.subjectSerial-parallel connectionvi
    dc.subjectLow magnetic field sensorsvi
    dc.titleGiant magnetoelectric effects in serial-parallel connected Metglas/PZT arrays with magnetostrictively homogeneous laminatesvi
    dc.typeJournal Articlevi
    Appears in Collections:Advanced Materials and Devices


    Thumbnail
  • 1-s2.0-S2468217920300538-main.pdf
    • Size : 2,16 MB

    • Format : Adobe PDF

    • View : 
    • Download :