DC Field | Value | Language |
---|---|---|
dc.contributor.author | Trinh, Dinh Cuong | - |
dc.contributor.author | Nguyen, Viet Hung | - |
dc.contributor.author | Vu, Le Ha | - |
dc.contributor.author | Phung, Anh Tuan | - |
dc.contributor.author | Do, Thi Huong Giang | - |
dc.date.accessioned | 2022-04-04T07:58:29Z | - |
dc.date.available | 2022-04-04T07:58:29Z | - |
dc.date.issued | 2020 | - |
dc.identifier.citation | Trinh, D. C., ... et al. (2020). Giant magnetoelectric effects in serial-parallel connected Metglas/PZT arrays with magnetostrictively homogeneous laminates. Journal of Science: Advanced Materials and Devices, 5 (3), tr. 354-360. | vi |
dc.identifier.uri | http://repository.vnu.edu.vn/handle/VNU_123/139480 | - |
dc.description.abstract | To ensure the magnetostrictive softness, the homogeneity, the decrease of the shear-lag effect and the space-saving construction of narrowed longitudinal-transverse L-T magnetoelectric (ME) composites, a novel parallel-connected-multi-bars (PCMB) geometry of PZT/Metglas is proposed and investigated by simulation and experiment. In this case, Metglas layers are structured in different geometries from the conventional single bar (c-SB) to conventional separated multiple bars (c-SMB), elongated separate multi-bar (e-SMB) and n-magnetic-bar based PCMB (n-PCMB). This n-PCMB geometry divides the conventional ME configuration into n parallel-connected ME units (n-PCMEU) according to the magnetic geometries. The optimal ME performance with the largest ME voltage coefficient αE of 630 V/cm.Oe is achieved in PCMEU with two Metglas bars (n = 2). The ME voltage coefficient can be further enhanced by integrating m of these optimal PCMEUs in series to form a serial-parallel ME unit array m-S (n-PMEU)A. The αE value increases by a factor of 3.6 and reaches 2.238 kV/cm.Oe for 4-S (2-PMEU)A, a factor that is almost equal to m. The resulting 4-S (2-PMEU)A sensor possesses an extremely high sensitivity of 18.1 μV/nT, with a resolution of 10−1 nT. | vi |
dc.language.iso | en | vi |
dc.publisher | Đại học Quốc gia Hà Nội | vi |
dc.subject | Magnetoelectric effect | vi |
dc.subject | Shape magnetic anisotropy | vi |
dc.subject | Shear-lag effect | vi |
dc.subject | Serial-parallel connection | vi |
dc.subject | Low magnetic field sensors | vi |
dc.title | Giant magnetoelectric effects in serial-parallel connected Metglas/PZT arrays with magnetostrictively homogeneous laminates | vi |
dc.type | Journal Article | vi |
Appears in Collections: | Advanced Materials and Devices |
Readership Map
Content Distribution
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Trinh, Dinh Cuong | - |
dc.contributor.author | Nguyen, Viet Hung | - |
dc.contributor.author | Vu, Le Ha | - |
dc.contributor.author | Phung, Anh Tuan | - |
dc.contributor.author | Do, Thi Huong Giang | - |
dc.date.accessioned | 2022-04-04T07:58:29Z | - |
dc.date.available | 2022-04-04T07:58:29Z | - |
dc.date.issued | 2020 | - |
dc.identifier.citation | Trinh, D. C., ... et al. (2020). Giant magnetoelectric effects in serial-parallel connected Metglas/PZT arrays with magnetostrictively homogeneous laminates. Journal of Science: Advanced Materials and Devices, 5 (3), tr. 354-360. | vi |
dc.identifier.uri | http://repository.vnu.edu.vn/handle/VNU_123/139480 | - |
dc.description.abstract | To ensure the magnetostrictive softness, the homogeneity, the decrease of the shear-lag effect and the space-saving construction of narrowed longitudinal-transverse L-T magnetoelectric (ME) composites, a novel parallel-connected-multi-bars (PCMB) geometry of PZT/Metglas is proposed and investigated by simulation and experiment. In this case, Metglas layers are structured in different geometries from the conventional single bar (c-SB) to conventional separated multiple bars (c-SMB), elongated separate multi-bar (e-SMB) and n-magnetic-bar based PCMB (n-PCMB). This n-PCMB geometry divides the conventional ME configuration into n parallel-connected ME units (n-PCMEU) according to the magnetic geometries. The optimal ME performance with the largest ME voltage coefficient αE of 630 V/cm.Oe is achieved in PCMEU with two Metglas bars (n = 2). The ME voltage coefficient can be further enhanced by integrating m of these optimal PCMEUs in series to form a serial-parallel ME unit array m-S (n-PMEU)A. The αE value increases by a factor of 3.6 and reaches 2.238 kV/cm.Oe for 4-S (2-PMEU)A, a factor that is almost equal to m. The resulting 4-S (2-PMEU)A sensor possesses an extremely high sensitivity of 18.1 μV/nT, with a resolution of 10−1 nT. | vi |
dc.language.iso | en | vi |
dc.publisher | Đại học Quốc gia Hà Nội | vi |
dc.subject | Magnetoelectric effect | vi |
dc.subject | Shape magnetic anisotropy | vi |
dc.subject | Shear-lag effect | vi |
dc.subject | Serial-parallel connection | vi |
dc.subject | Low magnetic field sensors | vi |
dc.title | Giant magnetoelectric effects in serial-parallel connected Metglas/PZT arrays with magnetostrictively homogeneous laminates | vi |
dc.type | Journal Article | vi |
Appears in Collections: | Advanced Materials and Devices |